3rd International Workshop
Hexagonal SiGe and Related Materials

October 27-28 2025

International conference center
Sorbonne Université

Presentation

The 3rd International Workshop on Hexagonal SiGe and related materials took place on 27-28 October 2025 at the International Conference Center of Sorbonne Université in Paris, France. The key objective of this interdisciplinary workshop was to identify challenges towards a fundamental understanding of the main properties of hexagonal silicon and related materials. This was the third edition of a series of workshops on the physics, chemistry and applications of group IV hexagonal materials after the two successful previous editions in Eindhoven (2023) and Milan (2024). By bringing the most recent experimental and theoretical viewpoints together, the following topics were covered:

• Growth of Hex-SiGe nanowires.
• Planar growth of Hex-SiGe and integration on silicon.
• Characterization of structural, electronic, and optical properties of Hex-SiGe.
• Defects in Hex-SiGe.
• First principles calculations of Hex-SiGe electronic properties.
• Modeling of Hex-SiGe structural and functional properties.
• Pressure-induced phase transitions: towards Hex-SiGe.
• Towards Hex-SiGe-based devices.
• III-Vs, II-VIs and related materials.

Recent advances, such as the demonstration of direct bandgap emission in hexagonal SiGe nanowires and improved modeling of phase stability, have significantly expanded the frontiers of this emerging material system. The workshop provided a unique platform to exchange knowledge, discuss open challenges, and outline future directions for both fundamental research and technological applications.

Invited Speakers

Organizers

Michele Amato, Université Paris-Saclay (France)
Silvana Botti, Ruhr University (Germany)
Silvia Pandolfi, Sorbonne Université (France)
Laetitia Vincent, Université Paris-Saclay (France)
Marc Túnica, Université Paris-Saclay (France)

Sponsors